STB16NK65Z-S| Datasheet

STB16NK65Z-S, STP16NK65Z

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

STP16NK65Z STB16NK65Z-S
N-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAK Zener - Protected SuperMESHTM MOSFET
Table 1: General Features
TYPE STP16NK65Z STB16NK65Z-S
s s s s s s

Figure 1: Package
ID 13 A 13 A Pw 190 W 190 W

VDSS 650 V 650 V

RDS(on) < 0.50 < 0.50

TYPICAL RDS(on) = 0.38 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY

3 12
3 1 2

TO-220

I SPAK

DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES

Figure 2: Internal Schematic Diagram

Table 2: Order Codes
SALES TYPE STP16NK65Z STB16NK65Z-S MARKING P16NK65Z B16NK65Z PACKAGE TO-220 I SPAK PACKAGING TUBE TUBE

Rev. 3 September 2005 1/12