STB180N55F3, STP180N55F3
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STB180N55F3 STP180N55F3
N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFETTM Power MOSFET
Features
Type STB180N55F3 STP180N55F3 VDSS 55V 55V RDS(on) 3.5m 3.8m ID 120A 120A
(1) (1)
Pw 330W 330W
3 1 2
3 1
1. Value limited by wire bonding
Ultra low on-resistance 100% avalanche tested
TO-220
D2PAK
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "single feature sizeTM" strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
Internal schematic diagram
Application
Switching applications
Order codes
Part number STB180N55F3 STP180N55F3 Marking 180N55F3 180N55F3 Package D
2PAK
Packaging Tape & reel Tube
TO-220
June 2007
Rev 2
1/14
www.st.com 14
STB180N55F3 Datasheet st Download PDF
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