STB185N55F3, STP185N55F3
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STB185N55F3 STP185N55F3
N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFETTM Power MOSFET
Features
Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5m 3.8m ID 120A
(1) (1)
Pw 330W 330W
120A
1. Value limited by wire bonding
Ultra low on-resistance 100% avalanche tested
TO-220
1
3 2
3 1
D2PAK
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique "single feature sizeTM" strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
Figure 1.
Internal schematic diagram
Applications
Switching applications Automotive
Table 1.
Device summary
Order codes Marking 185N55F3 185N55F3 Package D2PAK TO-220 Packaging Tape & reel Tube
STB185N55F3 STP185N55F3
June 2007
Rev 2
1/14
www.st.com 14
STB185N55F3 Datasheet st Download PDF
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