STB19NM65N| Datasheet

STB19NM65N, STF19NM65N, STI19NM65N, STP19NM65N, STW19NM65N

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STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N
N-channel 650 V - 0.25 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmeshTM Power MOSFET
Features
Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 < 0.27 < 0.27 < 0.27 < 0.27 ID
3

15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A

3 12

TO-220
3 1 2

I PAK

TO-220FP
3 1
2 3

1. Limited only by maximum temperature allowed

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

D PAK

TO-247

Figure 1.

Internal schematic diagram

Application

Switching applications

Description
This series of devices implements the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

Table 1.

Device summary
Order codes STI19NM65N Marking 19NM65N 19NM65N 19NM65N 19NM65N 19NM65N Package I PAK TO-220FP TO-220 D PAK TO-247 Packaging Tube Tube Tube Tape and reel Tube

STF19NM65N STP19NM65N STB19NM65NT4 STW19NM65N

February 2008

Rev 1

1/19
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