STB200N4F3| Datasheet

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STP200N4F3 STB200N4F3
N-channel 40V - 0.0035 - 120A - D2PAK - TO-220 planar STripFETTM Power MOSFET
Features
Type STB200N4F3 STP200N4F3

VDSS 40V 40V

RDS(on) Max <0.0040 <0.0044

ID 120A 120A

Pw 300W 300W
3 1
1 2 3

100% avalanche tested Standard threshold drive D PAK

TO-220

Applications

Switching applications Automotive

Description
Figure 1. This Power MOSFET is the latest development of STMicroelectronics unique "single feature sizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications. Internal schematic diagram

Table 1.

Device summary
Marking 200N4F3 200N4F3 Package D PAK TO-220 Packaging Tape & reel Tube

Order codes STB200N4F3 STP200N4F3

October 2007

Rev 2

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