STB20NM65N| Datasheet

STB20NM65N, STF20NM65N, STI20NM65N, STP20NM65N, STW20NM65N

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STW20NM65N-STI20NM65N-STF20NM65N STB20NM65N-STP20NM65N
N-channel 650V - 0.16 - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmeshTM Power MOSFET
Features
Type STB20NM65N STI20NM65N STF20NM65N STP20NM65N STW20NM65N VDSS (@TJmax) 710V 710V 710V 710V 710V RDS(on) Max < 0.19 < 0.19 < 0.19 < 0.19 < 0.19 ID
3

19A 19A 19A(1) 19A 19A

3 12

TO-220
3 1

I PAK

D PAK
3 1 2

1. Limited only by maximum temperature allowed

2 1

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

TO-220FP

TO-247

Figure 1.

Internal schematic diagram

Application

Switching applications

Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary
Order codes STB20NM65N STI20NM65N STF20NM65N STP20NM65N STW20NM65N Marking 20NM65N 20NM65N 20NM65N 20NM65N 20NM65N Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube

September 2007

Rev 1

1/18
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