STB21NM50N| Datasheet

STB21NM50N, STB21NM50N-1, STF21NM50N, STP21NM50N, STW21NM50N

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STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmeshTM Power MOSFET
General features
Type STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N VDSS (@Tjmax) 550V 550V 550V 550V 550V RDS(on) < 0.19 < 0.19 < 0.19 < 0.19 < 0.19 ID
3

3
1 2

3 1 2

18A 18A 18A(1) 18A 18A

TO-220

D2PAK

TO-220FP

1. Limited by wire bonding

3 12

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

I2PAK

TO-247

Description
The devices are realized with the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

Internal schematic diagram

Applications

Switching application

Order codes
Part number STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N Marking B21NM50N B21NM50N F21NM50N P21NM50N W21NM50N Package D I
2PAK 2PAK

Packaging Tape & reel Tube Tube Tube Tube

TO-220FP TO-220 TO-247

January 2007

Rev 6

1/18
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