STB21NM60N| Datasheet

STB21NM60N, STB21NM60N-1, STF21NM60N, STP21NM60N, STW21NM60N

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STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1
N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmeshTM Power MOSFET
Features
Type STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.22 < 0.22 < 0.22 < 0.22 < 0.22 ID
3

3
3 1 2

17 A 17 A 17 A(1) 17 A 17 A

TO-220

D2PAK

TO-220FP

1. Limited by maximum temperature allowed

3 12

2 1

100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1.

I2PAK

TO-247

Application

Internal schematic diagram

Switching applications

Description
This series of devices implements the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Table 1.

Device summary
Marking B21NM60N B21NM60N F21NM60N P21NM60N W21NM60N Package D2PAK I
2PAK

Order codes STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N

Packaging Tape and reel Tube Tube Tube Tube

TO-220FP TO-220 TO-247

February 2008

Rev 7

1/18
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