STB23NM60N| Datasheet

STB23NM60N, STF23NM60N, STI23NM60N, STP23NM60N, STW23NM60N

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STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 - 19 A - D2/I2PAK - TO-220/FP - TO-247 second generation MDmeshTM Power MOSFET
Features
Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.180 < 0.180 < 0.180 < 0.180 < 0.180 ID
1 3
3 12

19 A 19 A 19 A (1)

D PAK
2 1 3

I PAK

19 A 19 A
3 1 2

TO-247
3 1 2

1. Limited only by maximum temperature allowed

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

TO-220

TO-220FP

Figure 1.

Internal schematic diagram

Application

Switching applications

Description
This series of devices is designed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Table 1.

Device summary
Order codes Marking 23NM60N 23NM60N 23NM60N 23NM60N 23NM60N Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube

STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N

December 2007

Rev 2

1/18
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