STB23NM60ND| Datasheet

STB23NM60ND, STF23NM60ND, STI23NM60ND, STP23NM60ND, STW23NM60ND

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STB23NM60ND-STF23NM60ND STI23NM60ND-STP/W23NM60ND
N-channel 600 V - 0.150 - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmeshTM II Power MOSFET (with fast diode)
Preliminary Data

Features
Type STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.180 < 0.180 < 0.180 < 0.180 < 0.180 ID
1 3
3 12

20 A 20 A 20 A(1) 20 A 20 A

D PAK
2 1 3

I PAK

TO-247
3 1 2
1 2 3

1. Limited by wire bonding

The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities

TO-220

TO-220FP

Figure 1.

Internal schematic diagram

Application

Switching applications

Description
The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary
Order codes STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND January 2008 Marking 23NM60ND 23NM60ND 23NM60ND 23NM60ND 23NM60ND Rev 1 Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube 1/15
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.