STB25NM50N| Datasheet

STB25NM50N, STB25NM50N-1, STF25NM50N, STP25NM50N, STW25NM50N

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STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N
N-channel 500V - 0.11 - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmeshTM Power MOSFET
General features
Type STB25NM50N STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N VDSS (@Tjmax) 550V 550V 550V 550V 550V RDS(on) <0.140 <0.140 <0.140 <0.140 <0.140 ID
3
3

22A 22A 22A(1) 22A 22A

1

2

1

2

TO-220FP
3 1

TO-220

D PAK
3 12

1. Limited only by maximum temperature allowed

100% avalanche tested Low input capacitance and gate charge Low gate input resistancel

I PAK

TO-247

Internal schematic diagram Description
This series of devices is realized with the second generation of MDmeshTM Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

Applications

Switching application

Order codes
Part number STB25NM50N STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N Marking B25NM50N B25NM50N-1 F25NM50N P25NM50N W25NM50N Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube

January 2007

Rev 12

1/18
www.st.com 18


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