STB25NM60N| Datasheet

STB25NM60N, STB25NM60N-1, STF25NM60N, STP25NM60N, STW25NM60N

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STB25NM60N/-1 - STF25NM60N STP25NM60N - STW25NM60N
N-channel 600V - 0.140 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmeshTM Power MOSFET
General features
Type STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) <0.170 <0.170 <0.170 <0.170 <0.170 ID
3
3

20A 20A 20A(1) 20A 20A

1

2

1

2

TO-220FP
3 1

TO-220

D PAK
3 12

1. Limited only by maximum temperature allowed

100% avalanche tested Low input capacitance and gate charge Low gate input resistancel

I PAK

TO-247

Internal schematic diagram Description
This series of devices is realized with the second generation of MDmeshTM Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

Applications

Switching application

Order codes
Part number STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N Marking B25NM60N B25NM60N-1 F25NM60N P25NM60N W25NM60N Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube

January 2007

Rev 11

1/18
www.st.com 18


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