STB25NM60ND| Datasheet

STB25NM60ND, STF25NM60ND, STI25NM60ND, STP25NM60ND, STW25NM60ND, STp25NM60ND

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STP/F25NM60ND-STW25NM60ND STB25NM60ND-STI25NM60ND
N-channel 600V - 0.13 - 21A TO-220/FP/D2PAK/I2PAK/TO-247 FDmeshTM II Power MOSFET (with fast diode)
Preliminary Data

Features
Type STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND VDSS @ TJMAX 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.16 < 0.16 < 0.16 < 0.16 < 0.16 ID
3

3
1 2

3 1 2

21 A 21 A 21 A(1) 21 A 21 A

TO-220

D2PAK

TO-220FP

1. Limited only by maximum temperature allowed

3 12

2 1

The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1.

I2PAK

TO-247

Internal schematic diagram

Application

Switching applications

Description
The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary
Order codes STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND January 2008 Marking 25NM60ND 25NM60ND 25NM60ND 25NM60ND 25NM60ND Rev 2 Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube 1/15
www.st.com 15

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.