STB30NM60N| Datasheet

STB30NM60N, STF30NM60N, STI30NM60N, STP30NM60N, STW30NM60N

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STB30NM60N-STI30NM60N-STF30NM60N STP30NM60N-STW30NM60N
N-channel 600V - 0.1 - 25A - TO-220/FP - TO-247 - D2/I2PAK second generation MDmeshTM Power MOSFET
Preliminary Data

Features
Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) Max <0.13 <0.13 <0.13 <0.13 <0.13 ID 25A 25A 25A(1) 25A 25A PW 190 W 190 W 40 W 190 W 190 W
3 1 2
1 3 2

3 1

3 12

D PAK
2 1 3

I PAK

TO-247

1. Limited only by maximum temperature allowed

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

TO-220

TO-220FP

Application

Figure 1.

Internal schematic diagram

Switching applications

Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Table 1.

Device summary
Marking 30NM60N 30NM60N 30NM60N 30NM60N 30NM60N Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube

Order codes STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N

October 2007

Rev 1

1/15
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.