STB30NM60ND| Datasheet

STB30NM60ND, STF30NM60ND, STI30NM60ND, STP30NM60ND, STW30NM60ND

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STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND
N-channel 600V - 0.11 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmeshTM II Power MOSFET (with fast diode)
Preliminary Data

Features
Type STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND VDSS 600V 600V 600V 600V 600V RDS(on) Max < 0.13 < 0.13 < 0.13 < 0.13 < 0.13 ID 25A 25A 25A(1) 25A 25A
3
3 1 2

3 1 2

TO-220

D2PAK

TO-220FP

1. Limited only by maximum temperature allowed

The world's best RDS(on)*in TO-220 amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1.

3 12

2 1

I2PAK

TO-247

Internal schematic diagram

Application

Switching applications

Description
The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary
Order codes STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND November 2007 Marking 30NM60ND 30NM60ND 30NM60ND 30NM60ND 30NM60ND Rev 1 Package D PAK I PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube 1/15
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.