STB55NF03L| Datasheet

STB55NF03L, STB55NF03LT4, STP55NF03L

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STP55NF03L STB55NF03L STB55NF03L-1
N-CHANNEL 30V - 0.01 - 55A TO-220/D2PAK/I2PAK STripFETTM II POWER MOSFET
TYPE STP55NF03L STB55NF03L STB55NF03L-1
s s

VDSS 30 V 30 V 30 V

RDS(on) <0.013 <0.013 <0.013

ID 55 A 55 A 55 A
3 1
3 12

s s

TYPICAL RDS(on) = 0.01 OPTIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE

D2PAK TO-263

I2PAK TO-262

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s LOW VOLTAGE DC-DC CONVERTERS s HIGH CURRENT, HIGH SWITCHING SPEED s HIGH EFFICIENCY SWITCHING CIRCUITS

3 1 2

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM( ) Ptot Tstg Tj March 2002
.

Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature

Value 30 30 16 55 39 220 80 0.53 -60 to 175 175

Unit V V V A A A W W/ C C C 1/11

( ) Pulse width limited by safe operating area.