STB60NE06L-16| Datasheet

STB60NE06L-16, STB60NE06L-16T4

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STB60NE06L-16
N-channel 60V - 0.014 - 60A - D2PAK STripFETTM II Power MOSFET
General features
Type STB60NE06L-16

VDSS 60V

RDS(on) <0.016

ID 60A

Avalanche rugged technology High current capability Low gate charge 175 C operating temperature Low threshold drive
3 1

D2PAK

Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Internal schematic diagram

Applications

Switching application

Order codes
Part number STB60NE06L-16T4 Marking B60NE06L Package D
2PAK

Packaging Tape & reel

June 2006

Rev 6

1/13
www.st.com 13


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