STD7NS20| Datasheet

STD7NS20, STD7NS20T4

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STD7NS20 STD7NS20-1
N-CHANNEL 200V - 0.35 - 7A DPAK / IPAK MESH OVERLAYTM MOSFET
PRELIMINARY DATA TYPE STD7NS20 STD7NS20-1
s s s s s

VDSS 200 V 200 V

RDS(on) < 0.40 < 0.40

ID 7A 7A
3 1
2 1 3

TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL

DPAK TO-252

IPAK TO-251

DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
s

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25 C Drain Current (continuos) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 20 7 4.4 28 45 0.37 5 65 to 150 150
(1) ISD 7A, di/dt300 A/us, VDD V(BR)DSS, TjTjMAX

Unit V V V A A A W W/ C V/ns C C

( )Pulse width limited by safe operating area

June 2003

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