STD8NM60N| Datasheet

STD8NM60N, STF8NM60N, STP8NM60N

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STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmeshTM Power MOSFET
Features
Type STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max <0.65 <0.65 <0.65 <0.65 ID
3

3 2 1
1 2

7A 7A 7 A(1) 7A

IPAK

TO-220

1. Limited only by maximum temperature allowed

3 1
1 3 2

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

DPAK

TO-220FP

Application

Figure 1.

Internal schematic diagram

Switching applications

Description
This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Table 1.

Device summary
Marking D8NM60N D8NM60N-1 F8NM60N P8NM60N Package DPAK IPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Tube

Order code STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N

January 2008

Rev 2

1/17
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