STD95N2LH5| Datasheet

STD95N2LH5, STU95N2LH5

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STD95N2LH5 STU95N2LH5
N-channel 25 V - 0.0038 - 80 A - DPAK - IPAK STripFETTM V Power MOSFET
Features
Type STD95N2LH5 STU95N2LH5

VDSS 25 V 25 V

RDS(on) <0.0045 <0.0049

ID 80 A 80 A
3
3 1

RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses

2 1

DPAK

IPAK

Application
Switching applications Figure 1. Internal schematic diagram

Description
This product utilizes the 5th generation of design rules of ST's proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Device summary
Order codes Marking 95N2LH5 95N2LH5 Package DPAK IPAK Packaging Tape and reel Tube

STD95N2LH5 STU95N2LH5

February 2008

Rev 2

1/15
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