STD9NM50N| Datasheet

STD9NM50N, STD9NM50N-1, STF9NM50N, STP9NM50N

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STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N
N-channel 500V - 0.47 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmeshTM Power MOSFET
Features
Type STD9NM50N STD9NM50N-1 STP9NM50N STF9NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.56 <0.56 <0.56 <0.56 ID
3

7.5A
1

3 2

2 1

7.5A 7.5A 7.5A(1)
3 1

IPAK TO-220

1. Limited only by maximum temperature allowed

3 1 2

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

DPAK

TO-220FP

Description
This series of devices implements second generation MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Internal schematic diagram

Applications

Switching application

Order codes
Part number STD9NM50N-1 STD9NM50N STP9NM50N STF9NM50N Marking D9NM50N D9NM50N P9NM50N F9NM50N Package IPAK DPAK TO-220 TO-220FP Packaging Tube Tape & reel Tube Tube

10 April 2007

Rev 1

1/17
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