STE110NS20FD| Datasheet

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STE110NS20FD
N-channel 200V - 0.022 - 110A - ISOTOP MESH OVERLAYTM Power MOSFET
General features
Type STE110NS20FD

VDSS 200V

RDS(on) <0.024

ID 110A

Extremely high dv/dt capability 100% avalanche tested Gate charge minimized 20V gate to source voltage rating Low intrinsic capacitance Fast body-drain diode:low trr, Qrr
ISOTOP

Description
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Internal schematic diagram

Applications

Switching application

Order codes
Part number STE110NS20FD Marking E110NS20FD Package ISOTOP Packaging Tube

May 2006

Rev 3

1/12
www.st.com 12