STE48NM50| Datasheet

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STE48NM50
N-CHANNEL 550V @ Tjmax - 0.08 - 48A ISOTOP MDmeshTM MOSFET
Table 1: General Features
TYPE STE48NM50
s s s s

Figure 1: Package
RDS(on) < 0.1 ID 48 A

VDSS (@Tjmax) 550V

s s

TYPICAL RDS(on) = 0.08 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

ISOTOP

DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

Figure 2: Internal Schematic Diagram

APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Table 2: Order Codes
SALES TYPE STE48NM50 MARKING E48NM50 PACKAGE ISOTOP PACKAGING TUBE

Rev. 2 March 2005 1/9