STE53NC50| Datasheet

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STE53NC50
N-CHANNEL 500V - 0.070 - 53A ISOTOP PowerMeshTMII MOSFET
TYPE STE53NC50
n n n n n

VDSS 500V

RDS(on) < 0.08

ID 53 A

TYPICAL RDS(on) = 0.07 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
n

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25 C Drain Current (continuos) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 500 500 30 53 33 212 460 3.68 3 2500 65 to 150 150
(1) ISD 53A, di/dt100 A/us, VDD 24V, TjTjMAX

Unit V V V A A A W W/ C V/ns V C C 1/8

( )Pulse width limited by safe operating area