STESB01| Datasheet

STESB01, STESB01STR

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

STESB01
ESBT Base Driver
Feature summary

Controls ESBT base current in every line/load condition Supply voltage range: 8V to 20 V Storage time controlled by closed loop architecture (from 150ns to 1.5us) Under voltage lockout with hysteresis
SOT23-6L SO-8

Description
The STESB01 is a dedicated base current biasing transistor for the Emitter-Switched Bipolar Transistor (ESBT) family of power switches. The device is able to control the ESBT storage time (from 150ns to 1.5 s) using closed loop architecture. This guarantees proper operation of the ESBT in every line and load condition, avoiding oversaturation of the device and, at the same time, ensuring the correct base current when a higher load is required. The storage time can be adjusted with an external resistor, which allows maximum flexibility in different applications. The optimization of the base current value also reduces the base current losses to minimum level.

Order code
Part number STESB01STR STESB01DR Package SOT23-6L SO-8 Packaging 3000 Parts per Reel 2500 Parts per Reel

October 2006

Rev. 3

1/14
www.st.com
14