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STF12PF06| Datasheet

By datasheet - April 3rd, 2008

STF12PF06| Datasheet

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P-CHANNEL 60V - 0.18 - 12A TO-220/TO-220FP STripFETTM II POWER MOSFET
Table 1: General Features
TYPE STP12PF06 STF12PF06

STP12PF06 STF12PF06

Figure 1:Package
RDS(on) < 0.20 < 0.20 ID 12 A 12 A

VDSS 60 V 60 V

TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION

3 1 2
1 2

3

TO-220

TO-220FP

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS

Figure 2: Internal Schematic Diagram

Table 2: Order Codes
PART NUMBER STP12PF06 STF12PF06 MARKING P12PF06 F12PF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE

Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM( ) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter STP20PF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature 60 60 20 12 8.4 48 60 0.4 6 200 -55 to 175
(1) ISD 12A, di/dt 200A/us, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD= 25V

Value STF20PF06

Unit V V V A A A W W/ C V/ns mJ C

8 5.6 32 225 0.17

( ) Pulse width limited by safe operating area. NOTE:For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.

March 2005

Rev. 2.0

1/10


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