STF7NM80| Datasheet

STF7NM80| Datasheet

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STD7NM80 - STD7NM80-1 STF7NM80 - STP7NM80
N-channel 800V - 0.95 - 6.5A - TO-220/FP - IPAK - DPAK MDmeshTM Power MOSFET
Features
Type STD7NM80 STD7NM80-1 STF7NM80 STP7NM80

VDSS 800V 800V 800V 800V

RDS(on) < 1.05 < 1.05 < 1.05 < 1.05

ID 6.5A 6.5A 6.5A 6.5A
3
3 1 2

TO-220FP

1

2

TO-220

100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1 3 2
1 3

IPAK

DPAK

Application

Switching applications

Figure 1.

Internal schematic diagram

Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Table 1.

Device summary
Order codes STD7NM80 Marking D7NM60 D7NM60 F7NM60 P7NM80 Package DPAK IPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Tube

STD7NM80-1 STF7NM80 STP7NM80

October 2007

Rev 2

1/17
www.st.com 17


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