STFV3N150| Datasheet

STFV3N150, STP3N150, STW3N150

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STFV3N150 STP3N150 - STW3N150
N-channel 1500V - 6 - 2.5A - TO-220 - TO-220FH - TO-247 Very high voltage PowerMESHTM Power MOSFET
Features
Type STP3N150 STFV3N150 STW3N150

VDSS 1500V 1500V 1500V

RDS(on) < 9 < 9 < 9

ID 2.5A 2.5A 2.5A

Pw 140W 30W 140W TO-220
1 2 3

TO-220FH

100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching
TO-247

Description
Figure 1. Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Internal schematic diagram

Application

Switching applications

Table 1.

Device summary
Oder code STP3N150 STFV3N150 STW3N150 Marking 3N150 3N150 3N150 Package TO-220 TO-220FH TO-247 Packaging Tube Tube Tube

July 2007

Rev 4

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