STFV4N150| Datasheet

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STFV4N150
N-channel 1500V - 5 - 4A - TO-220FH Very high voltage PowerMESHTM Power MOSFET
General features
Type STFV4N150

VDSS 1500V

RDS(on) <7

ID 4A

Pw 40W

Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Fully plastic TO-220 package Creepage distance path is > 4mm
1 2 3

TO-220FH

Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. The creepage path is what makes this package unique from TO-220FP. The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package met all stringent safety norms in high voltage applications.

Internal schematic diagram

Applications

Switching application

Order codes
Part number STFV4N150 Marking FV4N150 Package TO-220FH Packaging Tube

March 2007

Rev 4

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