STG3P3M25N60| Datasheet

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STG3P3M25N60
3 Phase inverter IGBT - SEMITOP 3 module
PRELIMINARY DATA

General features
Type VCES 600V VCE(sat)(Max) @ IC=7A, IC@80 C Ts=25 C < 2.5V 25A

STG3P3M25N60

N-channel very fast PowerMESHTM IGBT Lower on-voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 KHz New generation products with tighter parameter distribution One screw mounting Compact design Semitop 3 is a trademark of Semikron
SEMITOP 3

Internal schematic diagram

Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBT, with outstanding performances.

Applications

High frequency inverters Motor drivers

Order codes
Sales Type STG3P3M25N60 Marking G3P3M25N60 Package SEMITOP 3 Packaging SEMIBOX

May 2006

Rev1

1/12
www.st.com 12

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.