STG5123| Datasheet

STG5123, STG5123DTR

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

STG5123
Low voltage 1 single SPDT switch with break-before-make feature
Features

High speed: tPD = 130 ps (typ.) at VCC = 3.0 V tPD = 140 ps (typ.) at VCC = 2.3 V Ultra low power dissipation: ICC = 0.2 uA (max.) at TA = 85 C Low ON resistance: RON = 1.0 (Typ.) at VCC = 4.5 V RON = 1.2 (Typ.) at VCC = 3.0 V RON = 2.0 (Typ.) at VCC = 1.8 V Wide operating voltage range: VCC (opr) = 1.65 to 4.5 V single supply 5 V tolerant and 1.8 V compatible threshold on digital control input at VCC = 1.65 to 4.5 V Latch-up performance exceeds 200 mA per JESD 78, Class II ESD performance tested per JESD22 2000 V human-body model (A114-B, Class II) 200 V machine model (A115-A) 1000 V charged-device model (C101)
DFN6L

Description
The STG5123 is a high-speed CMOS low voltage single analog SPDT (single-pole dual-throw) switch or 2:1 multiplexer/demultiplexer switch fabricated using silicon gate C2MOS technology. Designed to operate from 1.65 to 4.5 V, this device is ideal for portable applications. The device offers very low ON resistance (1 ) at VCC = 4.5 V. The switch S1 is ON (connected to common ports Dn) when the SEL input is held high and OFF (state of high impedance state exists between the two ports) when SEL is held low. The switch S2 is ON (connected to common port D) when the SEL input is held low and OFF (state of high impedance state exists between the two ports) when SEL is held high. Additional key features are fast switching speed, break-before-make delay time and ultra low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD and transient excess voltage immunity.

Table 1.

Device summary
Order code STG5123DTR Package DFN6L (1.2 x 1 mm) Packaging Tape and reel

October 2007

Rev 1

1/18
www.st.com 18