STP1N120| Datasheet
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STP1N120
N-channel 1200V - 30 - 500mA - TO-220 Zener - protected SuperMESHTM Power MOSFET
PRELIMINARY DATA
General features
Type STP1N120
VDSS 1200V
RDS(on) < 38
ID 500mA
PW 45W
100% avalanche tested Extremely high dv/dt capability ESD improved capability New high voltage benchmark Gate charge minimized
1 3 2
TO-220
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP1N120 Marking P1N120 Package TO-220 Packaging Tube
September 2006
Rev 1
1/10
www.st.com 10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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