STP30NM30N| Datasheet

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STP30NM30N
N-channel 300V - 0.078 - 30A - TO-220 Ultra low gate charge MDmeshTM II Power MOSFET
Features
Type STP30NM30N

VDSS 300V

RDS(on) <0.090

ID 30A

Worldwide lowest gate charge High dv/dt avalanche capabilities Low input capacitance Low gate resistance TO-220
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Description
This 300V Power MOSFET with a new advanced layout brings all unique advantages of MDmeshTM technology to medium voltages. The device exhibits worldwide lowest gate charge for any given on-resistance. Its use is therefore ideal as primary side switch for DC-DC converters as well as for switch mode power supply allowing higher efficiencies and system miniaturization.

Internal schematic diagram

Application

Switching application

Order code
Part number STP30NM30N Marking P30NM30N Package TO-220 Packaging Tube

April 2007

Rev 1

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