STP4N150, STW4N150

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

STP4N150 STW4N150
N-channel 1500V - 5 - 4A - TO-220/TO-247 very high PowerMESHTM Power MOSFET
Features
Type STP4N150 STW4N150

VDSS RDS(on) Max (@Tjmax) 1500 V 1500 V <7 <7

ID 4A 4A
3 1 2

Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching
TO-220

2 1

3

TO-247

Application

Switching applications Figure 1. Internal schematic diagram

Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Table 1.

Device summary
Marking P4N150 W4N150 Package TO-220 TO-247 Packaging Tube Tube

Order codes STP4N150 STW4N150

November 2007

Rev 5

1/14
www.st.com 14

STP4N150 Datasheet st Download PDF

Add this permalink to your bookmarks for future download of STP4N150 datasheet

Permalink: http://datasheet.emcelettronica.com/st/STP4N150

STP4N150 DATASHEET