STP5N120| Datasheet

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STP5N120
N-channel 1200V - 2.8 - 4.4A - TO-220 Zener - protected SuperMESHTM Power MOSFET
TARGET SPECIFICATION

Features
Type STP5N120

VDSS 1200V

RDS(on) < 3.5

ID 4.4A

PW 160W

100% avalanche tested Extremely high dv/dt capability ESD improved capability New high voltage benchmark Gate charge minimized
TO-220
1 2 3

Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs.

Internal schematic diagram

Application

Switching application

Order code
Part number STP5N120 Marking 5N120 Package TO-220 Packaging Tube

May 2007

Rev 1

1/10
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This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.