STP6NM60N| Datasheet

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STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N
N-channel 600V - 0.85 - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmeshTM Power MOSFET
Features
Type STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92 <0.92 <0.92 <0.92 ID 4.6A
1 3 2
1 3 2

4.6A 4.6A (1) 4.6A

TO-220

TO-220FP

1. Limited only by maximum temperature allowed
1

3 2 1

100% avalanche tested Low input capacitance and gate charge Low gate input resistance

DPAK

IPAK

Description
This device is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

Internal schematic diagram

Application

Switching applications

Order codes
Part number STD6NM60N-1 STD6NM60N STF6NM60N STP6NM60N Marking D6NM60N D6NM60N F6NM60N P6NM60N Package IPAK DPAK TO-220FP TO-220 Packaging Tube Tape & reel Tube Tube

June 2007

Rev 2

1/17
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