STP80NS04ZB| Datasheet

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

STP80NS04ZB
N-CHANNEL CLAMPED 7.5m - 80A TO-220 FULLY PROTECTED MESH OVERLAYTM MOSFET
PRELIMINARY DATA TYPE STP80NS04ZB
s s s s

VDSS CLAMPED

RDS(on) <0.008

ID 80 A

TYPICAL RDS(on) = 0.0075 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION TEMPERATURE
1

3 2

DESCRIPTION
This fully clamped Mosfet is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.

TO-220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS s ABS, SOLENOID DRIVERS s MOTOR CONTROL s DC-DC CONVERTERS

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDG VGS ID ID IDG IGS IDM( ) Ptot VESD(G-S) VESD(G-D) VESD(D-S) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Gate Current (continuous) Gate SourceCurrent (continuous) Drain Current (pulsed) Total Dissipation at TC = 25 C Derating Factor Gate-Source ESD (HBM - C = 100pF, R=1.5 k) Gate-Drain ESD (HBM - C = 100pF, R=1.5 k) Drain-source ESD (HBM - C = 100pF, R=1.5 k) Storage Temperature Max. Operating Junction Temperature Value CLAMPED CLAMPED CLAMPED 80 60 50 50 320 200 1.33 4 4 4 -65 to 175 -40 to 175 Unit V V V A A mA mA A W W/ C kV kV kV C C

( ) Pulse width limited by safe operating area. May 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

1/6