STP8NS25| Datasheet

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STP8NS25 STP8NS25FP
N-CHANNEL 250V - 0.38 - 8A TO-220/TO-220FP MESH OVERLAYTM MOSFET
TYPE STP8NS25 STP8NS25FP
s s s

VDSS 250 V 250 V

RDS(on) < 0.45 < 0.45

ID 8A 8A

TYPICAL RDS(on) = 0.38 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
3 1 2
1 2 3

DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter STP8NS25 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25 C Drain Current (continuos) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 65 to 150 150
(1) ISD 8A, di/dt300 A/us, VDD V (BR)DSS, TjTjMAX (*)Limited only by maximum temperature allowed

Value STP8NS25FP 250 250 20 8 5 32 80 0.64 5 2000 8(*) 5(*) 32(*) 30 0.24

Unit V V V A A A W W/ C V/ns V C C

( )Pulse width limited by safe operating area

April 2001

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