STS3DPF20V| Datasheet

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DUAL P-CHANNEL 20V - 0.090 - 3A SO-8 STripFETTM POWER MOSFET
TYPE STS3DPF20L
s s s

STS3DPF20V

VDSS 20 V

RDS(on) <0.11

ID 3A

TYPICAL RDS(on) = 0.090 @ 4.5 V TYPICAL RDS(on) = 0.1 @ 2.7 V STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) SO-8

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s MOBILE PHONE APPLICATIONS

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID IDM( ) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Single Operation Drain Current (continuous) at TC = 100 C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25 C Dual Operation Total Dissipation at TC = 25 C Single Operation Value 20 20 12 3 1.9 12 1.6 2 Unit V V V A A A W W

( ) Pulse width limited by safe operating area. June 2002
.

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

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