STS4DPF30L| Datasheet

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DUAL P-CHANNEL 30V - 0.07 - 4A SO-8 STripFETTM POWER MOSFET
PRELIMINARY DATA TYPE STS4DPF30L
s s

STS4DPF30L

VDSS 30 V

RDS(on) <0.08

ID 4A

s

TYPICAL RDS(on) = 0.07 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES s DC-DC CONVERTER

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID IDM( ) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Single Operation Drain Current (continuous) at TC = 100 C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25 C Dual Operation Total Dissipation at TC = 25 C Single Operation Value 30 30 16 4 2.5 16 2.0 1.6 Unit V V V A A A W W

( ) Pulse width limited by safe operating area. April 2002

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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STS4DPF30L DATASHEET