STS5N15M3| Datasheet

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STS5N15M3
N-channel 150V - 45m - 4.5A - SO-8 Ultra low gate charge MDmeshTM III Power MOSFET
PRELIMINARY DATA

Features
Type STS5N15M3

VDSS 150V

RDS(on) <0.057

ID 4.5A

Low on-resistance Low input capacitance and gate charge Low gate input resistance High dv/dt avalanche capabilities

SO-8

Description
This device is realized with the third generation of MDmeshTM technology. This Power MOSFET associates an improved vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Internal schematic diagram

Application

Switching application

Order code
Part number STS5N15M3 Marking Tbd Package SO-8 Packaging Tape & reel

April 2007

Rev 1

1/9
www.st.com 9

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.