STS6NF20V| Datasheet

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N-CHANNEL 20V - 0.030 - 6A SO-8 2.7V-DRIVE STripFETTM II POWER MOSFET
TYPE STS6NF20V
s s s

STS6NF20V

VDSS 20 V

RDS(on) < 0.040 ( @ 4.5 V ) < 0.045 ( @ 2.7 V )

ID 6A

TYPICAL RDS(on) = 0.030 @ 4.5 V TYPICAL RDS(on) = 0.037 @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM( ) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Value 20 20 12 6 3.8 24 2.5 Unit V V V A A A W

Total Dissipation at TC = 25 C Ptot ( ) Pulse width limited by safe operating area. August 2002
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