STS6PF30L| Datasheet

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P-CHANNEL 30V - 0.027 - 6A SO-8 STripFETTM POWER MOSFET
TYPE STS6PF30L
s s

STS6PF30L

VDSS 30 V

RDS(on) <0.030

ID 6A

TYPICAL RDS(on) = 0.027 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM( ) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed)

Information furnished is believed to be accurate and reliable. However, STMicroel of use of such information nor for any infringement of patents or other rights of third by implication or otherwise under any patent or patent rights of STMicroelectronic Value Unit to change without notice. This publication supersedes and replaces all information 30 components in life support devices or systems withou V authorized for use as critical

30 16 6 3.8 24

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The ST logo is registered trademark of ST V 2003 STMicroelectronics - All Righ

All other names are the property of their re A

Total Dissipation at TC = 25 C Ptot ( ) Pulse width limited by safe operating area. May 2003
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STMicroelectronics GROUP OF CO 2.5 W Australia - Brazil - China - Finland - France - Germany - Hong Kong - In Singapore actual Sweden of Note: For the P-CHANNEL MOSFET - Spain -polarity - Switzerland - Un voltages and current has to be reversed http://www.st.com

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