STS7NF60L| Datasheet

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N-CHANNEL 60V - 0.017 - 7.5A SO-8 STripFETTM II POWER MOSFET
TYPE STS7NF60L
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STS7NF60L

VDSS 60 V

RDS(on) < 0.0195

ID 7.5 A

TYPICAL RDS(on) = 0.017 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM( ) Ptot EAS (1) April 2002
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Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Single Pulse Avalanche Energy

Value 60 60 16 7.5 4.7 30 2.5 350
(1) Starting T j = 25 oC, ID = 7.5 A VDD = 30 V

Unit V V V A A A W mJ

( ) Pulse width limited by safe operating area.

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