STS8C5H30L| Datasheet

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STS8C5H30L
N-channel 30V - 0.018 - 8A/p-channel 30V - 0.045 - 5A - SO-8 Low gate charge STripFETTM III MOSFET
Features
Type STS8C5H30L(N-channel) STS8C5H30L(P-channel)

VDSS 30V 30V

RDS(on) <0.022 <0.056

ID 8A 5A S0-8

Conduction losses reduced Switching losses reduced Low threshold drive Standard outline for easy automated surface mount assembly

SO-8

Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram

Application

Switching application

Table 1.

Device summary
Part number Marking S8C5H30L Package SO-8 Packaging Tape & reel

STS8C5H30L

Note:

For the P-channel MOSFET actual polarity of voltages and current has to be reversed

July 2007

Rev 4

1/14
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