STS8DNH3LL| Datasheet

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STS8DNH3LL
DUAL N-CHANNEL 30V - 0.018 - 8A SO-8 LOW GATE CHARGE STripFETTM III POWER MOSFET
TYPE STS8DNH3LL

VDSS 30 V

RDS(on) <0.022

ID 8A

TYPICAL RDS(on) = 0.018 OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED

DESCRIPTION
This application specific MOSFET is the Third generation of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

SO-8

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS

Ordering Information
SALES TYPE STS8DNH3LL MARKING S8DNH3LL PACKAGE SO-8 PACKAGING TAPE & REEL

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM( ) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Value 30 30 16 8 5 32 2 Rev.0.2 Unit V V V A A A W

( ) Pulse width limited by safe operating area. June 2004 1/9