STS9D8NH3LL| Datasheet

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STS9D8NH3LL
Dual N-channel 30 V - 0.012 - 9 A - SO-8 low on-resistance STripFETTM Power MOSFET
Features
Type STS9D8NH3LL

VDSS Q1 Q2 30V 30V

RDS(on) < 0.022 < 0.015

Qg 7nC 8nC

ID 8A 9A

Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced
S0-8

Application

Switching applications Figure 1. Internal schematic diagram

Description
This device uses the latest advanced design rules of ST's STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.

Table 1.

Device summary
Order code Marking 9D8H3LLPackage SO-8 Packaging Tape & reel

STS9D8NH3LL

December 2007

Rev 3

1/14
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