STSJ25NF3LL| Datasheet

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STSJ25NF3LL
N-CHANNEL 30V - 0.0085 - 25A PowerSO-8TM LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE STSJ25NF3LL
s s s s s

VDSS 30 V

RDS(on) <0.0105

ID 25 A

TYPICAL RDS(on) = 0.0085 @ 10V TYPICAL Qg = 24 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCE PowerSO-8TM

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. This silicon, housed in thermally improved SO-8TM package, exhibits optimal on-resistance versus gate charge tradeoff plus lower R thj-c.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS DRAIN CONTACT ALSO ON THE BACKSIDE

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID ID IDM( ) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C (*) Drain Current (continuous) at TC = 25 C (#) Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Total Dissipation at TC = 25 C (#) Value 30 30 16 25 12 16 100 70 3
(*) Value limited by wires bonding

Unit V V V A A A A W W

( ) Pulse width limited by safe operating area. October 2003

1/8

NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: 25NF3LL@