STT3PF20V| Datasheet

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STT3PF20V
P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFETTM II POWER MOSFET
TYPE STT3PF20V
s s s

VDSS
! W

RDS(on)
1 ! W 5#$W 1 !$ W 5!&W

ID
!! 6

TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s CELLULAR MARKING s STP2

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Value 20 20 12 2.2 1.39 8.8 1.6 Unit V V V A A A W

Total Dissipation at TC = 25 C Ptot () Pulse width limited by safe operating area. October 2002
.

Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

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