STT3PF30L| Datasheet

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P-CHANNEL 30V - 0.14 - 3A SOT23-6L STripFETTM II POWER MOSFET
TYPE STT3PF30L
s s

STT3PF30L

VDSS 30 V

RDS(on) <0.165

ID 3A

TYPICAL RDS(on) = 0.14 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs s CELLULAR

SOT23-6L

INTERNAL SCHEMATIC DIAGRAM

MARKING s STA3

ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM( ) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25 C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Value 30 30 16 2.4 1.5 10 1.6 Unit V V V A A A W

Total Dissipation at TC = 25 C Ptot ( ) Pulse width limited by safe operating area. September 2002
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Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

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